Abstract
The trends of various high-k gate dielectrics deposited on silicon or germanium is reviewed for logic and memory devices. Initially, Zr and low percentage of Al incorporation into HfO2-based high-k dielectrics gate stack on silicon through different process conditions were outlined. Subsequently, high-k gate stack deposition process on Ge was evaluated to form a stable Ge/high-k interface. We have also looked at the high-k gate dielectric stacks in a MIM capacitor for possible applications in memory and AI hardware.
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