(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS

Abstract

One of the ultimate CMOS structures can be the combination of III-V nMOSFETs and Ge pMOSFETs. In this presentation, we focus on the possible solutions for realizing CMOS integration of III-V and Ge MOSFETs. In order to realize the integration of III-V/Ge MOSFETs, the direct wafer bonding is a promising way. The gate stack formation is also a critical issue for III-V/Ge CMOS integration. We have employed Al2O3 gate insulators for both InGaAs and Ge MOSFETs. We have recently realized Al2O3/GeOx/Ge MOS gate stacks with low Dit and thin EOT by employing ALD Al2O3 and successive plasma oxidation. We consider that metal S/D scheme can be the best solution for III-V/Ge CMOS. We have implemented Ni-based metal S/D technologies for InGaAs and Ge MOSFETs. By employing these technologies, we have demonstrated successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.