Abstract
Mixed phase materials composed of refractory metal-based pairs such as Ru/TaN and Ru/WCN, grown by plasma enhanced atomic layer deposition (PEALD), can perform as directly platable Cu diffusion barriers which can be scaled to thicknesses of ~2-3nm. While such direct plate liners employ conventional barrier materials such as TaN and WCN, direct plate liner extendibility may be enhanced by employing a barrier metal with a lower intrinsic resistivity without the presence of carbide or nitride phases that are effective at preventing the diffusion of Cu. In considering suitable materials for this application, both the ability to support copper electrodeposition as well as good intrinsic copper and oxygen diffusion barrier performance are critical characteristics. Accordingly, dopant metals such as Co are selected as materials to investigate for replacement of conventional barrier materials in direct plate barriers by combining with Ru to form RuCo mixtures.
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