Abstract
The first generation of Si photonics is about over by breakthrough of n+Ge laser as a on-chip monolithic light source. The grand challenge for the next generation is to implement on-chip wavelength division multiplexing (WDM); how to lock the wavelength on an uncooled chip. The present paper proposes the key to the locking in terms of strain to control refractive and absorption indices.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call