(Invited) Ballistic Hot Electron Effects in Nanosilicon Dots and Their Photonic Applications

Abstract

The physical property of nanocrystalline silicon (nc-Si) dots as a confined wide-gap material relates not only to photonics, but also to electronics. As supported experimentally and theoretically, the electronic structure with discrete levels significantly enhances the impact ionization rate, and then internal electron avalanche occurs at the early stage of photo-excitation or injection. The nc-Si diode, on the other hand, acts as a planar cold cathode which emits ballistic hot electrons. In addition to the use in vacuum, the device is available for the operation in solutions. In vacuum active-matrix nc-Si electron emitter array has been developed for massively parallel electron beam direct-write lithography. Another application scheme in solutions provides alternative thin films deposition of Si, Ge, and SiGe, in which the nc-Si emitter supplies highly reducing electrons. Recent advancements of these studies are discussed.