Abstract
State of the art SiGe BiCMOS processes today show impressive high-frequency performance, with fT and fMAX exceeding 500GHz. However, there is also a vast application space that does not require these very high frequencies, but that can still benefit from the performance improvements made in HBT technology. By taking into account the specific application requirements, the transistor can be optimized e.g. for extremely low noise figures at moderate frequencies, or the high fT can be traded against a higher breakdown voltage, without degrading fMAX, for a better power capability. In this paper, the various aspects of tuning the technology parameters to fit the application requirements will be discussed.
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