(Invited) Application of Three Dimensional Chip Stacking Technology for Fully Depleted Silicon-on-Insulator Quantum Beam Imager

Abstract

Requirements of a quantum beam imager such as a vertex detector in high energy physics experiment are intelligent functions which are realized by embedding memories of quantum beam hit-position, hit-charge, and hit-timing in a pixel with keeping small pixel size to achieve high spatial resolution. To satisfy the requirements, circuit layer stacking on a sensor, i.e., three dimensional (3D) technology, has been widely studied and proposed. The Silicon-on-Insulator (SOI) sensor is one of the 3D sensors because the circuits in the top silicon layer is on the sensors of the bottom silicon substrate. The circuits and sensors are electrically connected by submicron W filled vias through the buried oxide (BOX), which are called as through BOX vias (TBV). Thus, the SOI sensor has extremely higher fill factor than the bulk-CMOS sensor. In order to achieve more intelligent functions in the pixel, however, the pixel size by using the simple SOI technology is large to get the required spatial resolution. Therefore, multiple circuit layer formation by chip stacking technology is adopted. In this chip stacking, a fine pitch micro-bump technology with two-tile face-to-face stacking is employed because of the simplest 3D structure. The target of micro bump diameter and spacing are 2.5 μm and 5 μm, respectively. The SOI 3D chip stacking process is starting with the base chips which are fabricated by an 8 inch 0.2 μm fully depleted SOI pixel sensor process with five metal layers. After the metal 5 etching, an oxide film is deposited and planarized by chemical mechanical polishing (CMP). W-filled vias to a under bump metal is formed at bump formation areas. After the under bump metal deposition and patterning, metal bumps are formed. Then, two chips which are lower and upper chips are aligned and bonded face-to-face at 200℃ followed by adhesive injection. To make bonding pads on the upper chip, the upper chip handle silicon is etched until exposing the BOX and TBV by wet solution. TBV can easily connect between circuits in the upper chip and the bonding pad metal without any through silicon via (TSV) process. This is the most superior point to use the FD-SOI pixel sensor in 3D structure. The TBV size is around 0.3 μm which is much smaller than a conventional TSV whose size is around 5 μm by using the most advanced technology. In addition, this TBV can be used as interconnections between multiple chips without any TSV. Finally, bonding pad and passivation formation are done. For micro bump formation, a gold bump was utilized because the gold is oxidation-resistant metal. The micro gold bump was fabricated by two methods. One is a cone shaped gold bump manufactured by a gold nanoparticle deposition with a photoresist lift-off technique [1]. The cone shaped gold bump with 2.5 μm in diameter and 2.5 μm in height are successfully formed on the under bump metal layer. Because of the nanoparticle deposition, the gold bump is easier to deform by the bonding. Thus, the collapsibility allows low stress to the die and high reliable junctions. It is also confirmed that the bump resistance is approximately 0.25 Ω/bump from daisy chain measurement. The other is a gold cylindrical bump using a combination of inverse-tapered photoresist and low incident angle sputtering [2]. Because of narrowing at the top, lower pressure to collapse between the bumps is required than the gold cone bumps. This may also improve bump yield and reliability. 0.37 Ω/bump of the bump resistance is obtained by the gold cylindrical bumps. Using the FD-SOI 3D chip stacking technology with the cylindrical bump, the pixel sensor designed for the International Linear Collider (ILC) vertex detector called SOFIST was fabricated and the chip photo is shown in the figure. In SOFIST, hit-position, hit-charge, and hit-time memories are embedded in each pixel by the 3D micro bump bonding with 20 mm pixel size. Owing to the removal of the handle silicon of the upper chip, the patterns of the lower chip can be seen through the upper chip oxide. The green patterns close to bonding pads are backsides of silicon layer in the upper chip. As shown in the figure, our 3D process technology is successfully introduced in FD-SOI quantum beam imager.