Abstract
We report that gas diffusion barriers grown by atomic layer deposition (ALD) can protect moisture-sensitive, thin-film solar cells based on a Cu(In, Ga)Se2 absorber. The solar conversion efficiency for cells with ALD Al2O3 directly deposited, or laminated with a flexible polymer front sheet coated with an ALD barrier, was measured after stressing for more than 1000 hr in "damp heat" at 85{degree sign} C/85% RH with simulated solar illumination. For cells with ALD Al2O3 barriers, either directly deposited or laminated, the conversion efficiency decreased by only 3% after 1000 hr "damp heat" stressing. This supports ALD as an effective moisture-barrier strategy for extending the lifetime of flexible, thin-film CIGS solar cells, which are attractive for future building integrated applications.
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