Abstract
This paper delves into the recent advancements in crafting high-performance metal-oxide thin-film transistors (TFTs) via the atomic-layer deposition (ALD) process. As metal-oxide TFTs emerge as pivotal backplane technology for cutting-edge display products like organic light-emitting diode (OLED) televisions and selectors for 3D-DRAM, relentless efforts are underway to push the boundaries of performance through diverse methodologies. Among these, two prominent avenues, namely, adjusting cation composition ratios and innovating novel structural designs, are spotlighted. Both pathways leverage the myriad advantages offered by the ALD process over conventional sputtering methods. The paper elucidates the state-of-the-art characteristics of ALD-deposited oxide semiconductors, revealing promising prospects for ALD-derived metal oxide TFTs to emerge as prime contenders for the next generation of high-end active-matrix displays and 3D DRAM devices.This work was supported by Institute of Information & communications Technology Planning & Evaluation (IITP) under the artificial intelligence semiconductor support program to nurture the best talents (IITP-2024-RS-2023-00253914) grant funded by the Korea government.
Published Version
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