Abstract
Silicon ions (Si +) of 120 MeV have been implanted on LEC grown (1 0 0) oriented GaAs single crystal substrates. The implanted samples were subjected two different etchants viz., AB etchant (AgNO 3:CrO 3:HF:H 2O) and BNCL etchant (Bi(NO 3) 3–H 2O 2–HCl). The surface morphology of the swift heavy ion Si +-implanted samples has been analyzed. It is observed that the implantation-induced defects are analogous to columnar defects with nano-dimensions. ‘AB’ etchant reveals that not only the end of range (EOR) of the defects but also a few ions is extended from the EOR to the surface of the sample. BNCL-etched samples have also revealed the columnar structures along the implanted region. After the etching of the samples using BNCL etchant, pyramidal shape of the defects was observed.
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