Abstract
Silicon nanowires have been fabricated by the metal-assisted chemical etching method. The etching rate of silicon can be adjusted by changing the concentration of titanium in the solution. Investigations by electron spin resonance of silicon nanowires show that Pb0 center is the prominent defect at the Si/SiO2 interfaces, and its density decreases as the etching rate decreases. The red-shift of the Raman peak with decrease of the etching rate indicates a progressive increase of tensile strain in Si at the interface, which induces the shortening of the length of the Si–O bond confirmed by the Fourier transform infrared spectrometer investigations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
