Abstract
AbstractBoron and oxygen contamination in Czochralski‐grown (Cz) silicon leads to a degradation of the minority charge carrier lifetime within short times due to the formation of recombination active complexes. The formation of these complexes is investigated for longer times showing a further development of the defect. This development called ‘regeneration’ is triggered by illumination or applied forward voltages and leads to a new state of the defect. This new state of the defect is proven to be less recombination active allowing higher stable minority carrier lifetimes and conversion efficiencies of solar cells. The influences of temperature and light intensity are discussed. Copyright © 2007 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
