Abstract
Swift heavy ion irradiations were carried out on metal organic chemical vapour deposition- grown GaN epilayers on sapphire (0 0 0 1) substrates at room temperature, with 100 MeV O7+ ions and fluences varying from 1×1012, 1×1013 and 5×1013 ions cm−2. The pristine and irradiated GaN samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and UV–visible optical transmittance studies. XRD results indicate the presence of gallium oxide phases after O7+ ion irradiation and the increase in the Ga2O3 peak intensity and full-width half-maximum of irradiated GaN with increasing ion fluences. Surface morphology was observed from AFM analysis, which indicates a decrease in the root-mean square of roughness from 3.9 to 0.5 nm. PL measurements show a red shift as compared to the as-grown GaN. The UV–visible optical transmittance studies show a decrease in band gap after ion irradiation.
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