Abstract
The holmium doped rubidium titanyl phosphate single crystal was grown using a high-temperature flux method using rubidium polyphosphate as a flux compound. The structural nature of the grown Ho: RTP single crystal has been confirmed by powder XRD analysis. The addition of Ho dopant shows variations in the diffraction peaks refer to the combination of holmium with the RTP lattice. The UV absorption and transmittance study show no visible absorption induced by holmium. The electrical parameters like, dielectric constant, dielectric loss, AC conductivity and impedance have been studied up to the Curie point level of the material, and the results indicating that the doping of holmium reduces the electrical activities in the RTP single crystal, and there is no change in the Curie point of the Ho: RTP single crystal compared to pure RTP. The ferroelectric result shows that the polarization and coercive field of material have a lower value than the pure RTP single crystal due to the presence of holmium in the RTP, which is very useful for periodically poled device applications. Ferroelectric fatigue test on Ho: RTP shows that the grown crystal does not undergo polarization decay up to 5000 frequency cycles.
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