Abstract
AbstractMultiple GaInN quantum wells (QWs) were grown on side facets with reduced piezoelectric fields (PFs) of selectively grown GaN stripes oriented along the 〈1$ \bar 1 $00〉 and 〈11$ \bar 2 $0〉 directions by metalorganic vapor phase epitaxy (MOVPE). The different luminescence wavelengths observed for the QWs on these facets can be explained by the reduced PFs, additionally the QW thickness depends on the facet type. Although stripes running along 〈1$ \bar 1 $00〉 and 〈11$ \bar 2 $0〉 develop similar triangular or trapezoidal shape, their detailed growth behaviour, electrical and luminescence properties differ significantly pointing to different adsorption/desorption and inter‐facet migration processes of In, Ga and the p‐type dopant Mg. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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