Abstract
Comparative investigations on linearly graded metamorphic high-electron-mobility transistors (MHEMTs) with/without applying surface passivation or double-gate-recess techniques have been comprehensively made in this work. The proposed double-gate-recessed, -passivated MHEMT with gate dimensions of has demonstrated superior extrinsic transconductance of , gate-drain breakdown voltage of , intrinsic voltage gain of 69, saturated output power of , and power-added efficiency of 53.8%, due to its enhanced gate-modulation capability, suppressed gate leakages, and relieved kink effects. The proposed device can be promisingly applied to high-gain and high-power millimeter-wave integrated circuit technologies.
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