Abstract
Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H2O2 oxidization technique. The tensile (compressive)-strained channel is devised by the In0.52Al0.48As/In0.41Ga0.59As (In0.52Al0.48As/In0.63Ga0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOS-MHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (gm), current drive, intrinsic voltage gain (AV), and power performance.
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