Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

M Gaillardin,M Raine,P Paillet,P.C Adell,S Girard,O Duhamel,F Andrieu,S Barraud,O Faynot

doi:10.1016/j.nimb.2015.08.085

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

M Gaillardin, M Raine + Show 7 more

https://doi.org/10.1016/j.nimb.2015.08.085

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Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms	Publication Date: Sep 20, 2015
Citations: 6

Affiliation: CEA DAM Île-de-France, Atomic Energy and Alternative Energies Commission, Jet Propulsion Laboratory, Laboratoire Hubert Curien, CEA LETI, Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble

#Multiple-gate Devices #Single-Event Transients + Show 8 more

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Abstract

We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

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