Abstract
In this work copper layers deposited on 200 mm wafers have been intentionally contaminated by gaseous HCl in order to study the contamination mechanisms as well as the aging in time of Cl contaminated layer. This study has been performed in real industrial clean room conditions with a contamination process representative of real unavoidable contamination problem that can occur in a process fab. The mechanism of this passivation effect has been investigated as well as the evolution in time of the behaviour of the contaminated layers. This evolution has been studied from the deposition step onto 40 days. Moreover, depending of the queue time between the Cu deposition step and the contamination step, a “passivation effect” has been evidenced, which avoid the formation of a natural copper carbonate or hydroxycarbonate. Parallel Angle Resolved XPS (PARXPS) measurements were performed, allowing accurate thickness measurements of the contaminated layer. A specific fast loading capability of full wafers, allowed us to access to the first stage of the oxide/contaminated layer growth that occurs during the storage.
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