Abstract
The characteristics of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with quaternary AlInGaN streamlined quantum barriers (QBs) are investigated in this paper. The simulated results show that the light output power and the internal quantum efficiency (IQE) of deep UV LEDs with AlInGaN streamlined QBs have been improved obviously, and the efficiency droop effect has been significantly alleviated. After in-depth study, it is shown that quaternary AlInGaN streamlined QBs is designed to reduce the polarization charge density between quantum wells (QWs) and QBs, and relieve band bending. In addition, the streamline barrier can reduce the kinetic energy of injected carriers, and improve the probability of the carriers being bounced back to the quantum wells, so as to enhance the capture of carriers in the quantum wells. As a result, the recombination rate of electron and hole in the QWs is enhanced, the light output power and the IQE are improved, and the efficiency droop effect is alleviated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
