Abstract
A novel trench-gate-type super barrier rectifier (TSBR) with stepped oxide (SO-TSBR) is proposed and researched by device simulator. As an improved TSBR structure, the proposed SO-TSBR with high breakdown voltages be effective in achieving low forward voltage drop. Simulations have demonstrated the two-dimensional charge coupling in the N-drift region resulting in an optimal electric field distribution. The 280 V SO-TSBR used for the numerical simulations decreases the on-state drop by 26.6% at the forward current density of 2.5 A/cm2 than that of the conventional TSBR. The SO-TSBR with deep trench structure reduces further the forward voltage drop by 11.0% at the forward current density of 20 A/cm2.
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