Abstract
A theory of transient SCLC for saw-tooth voltage pulses has been developed on the basis of M any and R acavy's method. Expressions have been obtained which allow the determination of some parameters of the material, particularly the effective mobility of carriers using special points of the transient characteristics. Experimental investigation of the transient characteristics of thin-film InCdSSiO xAl heterojunction diodes have been carried out to verify the theory developed for the saw-tooth voltage pulse. The I–V characteristics observed with the help of a curve-tracer at sufficiently fast linear voltage increase exhibit a region of n-type negative differential resistance. The theory is found to be in satisfactory agreement with the experiment in the regions where the solutions are derived in analytical form.
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