Investigations of the staircase memristor model and applications of memristor-based local connections

Xiao Yang,Frank Z Wang,Wanlong Chen

doi:10.1007/s10470-016-0715-3

Xiao Yang, Frank Z Wang + Show 1 more

Open Access

https://doi.org/10.1007/s10470-016-0715-3

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Abstract

The memristor is postulated by Chua (IEEE Trans Circuit Theory, 18(5):507---519, 1971) as the fourth fundamental passive circuit element and experimentally validated by HP labs in 2008. It is an emerging device in nano technology that provides low power consumption as well as high density. In this paper, the staircase memristor model is discussed and investigated with the HP memristor model. By connecting HP memristor models in series or parallel, a staircase memristor model could be constructed and demonstrate staircase behavior. By comparing the staircase memristor model to the general HP memristor model, distinctions between them are demonstrated and this lends themselves to different applications. Further to the memristor-based cellular neural network (CNN), the structure is modified and applied to the echo state network (ESN) where memristors are used as local connections. By this means, the ESN benefits from the simple structure, non-volatility and low power feature of memristors and therefore the complexity and size of the original ESN architecture can be reduced. Meanwhile, the simpler structure still has satisfactory performance in applications compared with the original ESN.

Highlights

Since the claim that the missing memristor was found [24], memristive devices have become one of the leading areas in nano technology because of its promising attributes of nano-scale size, low power feature and simple structure
In order to evaluate the performance of the memristor based echo state network (ESN) with cellular neural network (CNN) structure (MCNN ESN), 10 running results are obtained for the proposed ESN with memristive CNN structure, the original ESN structure with memristive connections and the original ESN as shown in Table 2 using Python 2.7, Oger toolbox 1.1.3 and script developed by Mantas [21]
By deriving the HP memristor with a single stair, the staircase memristor model is investigated in this paper based on the delayed-switching effect and the experimental results of discovered memristors

Summary

Introduction

Since the claim that the missing memristor was found [24], memristive devices have become one of the leading areas in nano technology because of its promising attributes of nano-scale size, low power feature and simple structure. It has been considered as one of the potential candidates to substitute the CMOS technology which is reaching the bottleneck in terms of size. The memristor was first postulated as the fourth fundamental passive circuit element by Chua [8] Following his concept, there are four fundamental circuit elements and each element represents a two-variable relationship between the four basic circuit variables, namely, charge q, current i, flux u and voltage v. A physical relation between u and q is not necessary [9]

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