Abstract
In this paper the reverse current–voltage characteristics of a heterojunction based on spray deposited indium tin oxide (ITO) -p CdTe is presented. Particular reference is made to the study of the characteristics within the temperature intervals 120–370 K. It is established that, the reverse current–voltage characteristics have two distinct regions along the curves with the applied voltage having a strong power dependence on the reverse current at lower temperatures (Irev ∼ Um) . At higher temperatures however, the reverse current is directly proportional to the applied voltage (Irev ∼ U ). Also, a possible energy band diagram to explain the current flow mechanism suggested for the reverse current in the structure is presented.
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