Abstract
Electrical characteristics of 50 MeV lithium (Li) ion implanted semi-insulating indium phosphide (SI-InP) have been investigated using resistivity and Hall measurements. The SI-InP samples were implanted with 50 MeV 7Li ions of dose 1 × 1014 and 5 × 1015 cm—2 at room temperature. In-situ resistance measurements were carried out on the SI-InP samples as a function of dose using four-probe method. The resistance decreases as a function of dose. The sheet resistivity and Hall measurements were carried out on the as-implanted and annealed implanted samples using van der Pauw technique. In the as-implanted samples, the sheet resistivity decreases and the sheet carrier concentration increases with dose which indicates that 7Li acts as a shallow interstitial donor. For the annealed implanted samples, the sheet resistivity increases and the sheet carrier concentration decreases. This may be due to the compensation of the implanted 7Li and/or its interaction with defects in general displacing the 7Li from its interstitial position with annealing. The cross-sectional SEM picture reveals the buried layer and the defects due to 7Li implantation.
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