Abstract
Alloy engineered single crystals demonstrates enhanced electrical and optoelectronic properties. For this purpose, Crystals of tin sulfoselenide (SnS0.5Se0.5) have been synthesized by the Direct Vapour Transport (DVT) technique. The elemental, morphological, structural properties and high crystallinity of DVT grown SnS0.5Se0.5 crystals were investigated by EDAX, SEM, XRD and HRTEM respectively. The core-level spectra of SnS0.5Se0.5 crystals were studied by X-ray photoelectron spectroscopy (XPS). The electrical properties of grown crystals were studied by high temperature electrical resistivity measurement and Hall effect measurement. The electrical resistivity measurement was studied in different directions in the temperature range of 297 K–673 K. The SnS0.5Se0.5 ternary alloy crystal exhibits anisotropic performance and showed higher conduction in the in-plane direction. The study of temperature-dependent vibrational properties was carried out by Raman measurement experiment. The photodetection study was performed on a SnS0.5Se0.5 crystal-based device under different biasing voltages and intensities at an on/off period of 10 s and various photodetection parameters were also evaluated. The ternary alloyed crystal-based device exhibited good photoresponse and enhanced optoelectronic parameters.
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