INVESTIGATIONS OF RECOMBINATION MECHANISMS IN THE PULSED FAR INFRA RED PHOTORESPONSE OF n-InP

Abstract

Narrow (10-50 ns) far infra red pulses (λ = 91 µ) with sharp {≤ 1 ns) cut-off are used to probe the recombination dynamics of electrons in high purity n-InP. The decay of the photosignal is investigated for a variety of laser intensities, sample bias voltages, temperatures and compensation ratios. A simple model is outlinedjto explain the observed linear dependence at low bias of the inverse decay time parameter, τ, on electric field. For higher impurity samples at higher intensities the decay exhibits an initial fast component. A more complete model, invoking Auger recombination, is outlined to explain this effect.