Abstract
Monte Carlo simulation of hot-electron transport in bulk n-GaAs in the presence of crossed electric and magnetic fields shows that inverted populations associated with cyclotron motion can arise at low temperatures provided charged impurity scattering is weak. Electron-electron scattering, even at electron concentrations as low as 1014 cm-3, at 10K limits the range of electric fields over which inversion occurs. Strong negative magnetoresistance, though weakening, persists to 300K, even in the presence of an impurity and electroncon centration of 2×l017 cm-3 and dynamic screening of the polar interaction.
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