Abstract

Using the apparatus for investigations of mechanically induced excited states, which is described in Part I of this paper, the electron emission from mechanically treated alkali halide crystals and their surface charge distribution is measured. While the spontaneous postemission (not depending on temperature below RT) of electrons after mechanical treatment can be explained as field emission from surface traps, the TSEE low-temperature glow peaks are ascribed to the decay of defect electron centres. A simple mechanism is suggested to understand the mechanically induced excitation process. Measurements of the locally resolved OSEE show the necessity to know the charge structure in order to interprete the emission relief properly. Unter Benutzung der in Teil I dieser Arbeit beschriebenen Apparatur zur Untersuchung mechanisch induzierter Anregungszustande wurden Messungen der Elektronenemission von mechanisch beanspruchten Alkalihalogenidkristallen sowie deren Ladungsstruktur durchgefuhrt. Wahrend die (unterhalb RT temperaturunabhangige) spontane Nachemission von Elektronen nach mechanischer Bearbeitung als Feldemission aus Oberflachenstorstellen gedeutet wird, sind die Tieftemperatur-Glowpeaks der TSEE auf den Zerfall von Defektelektronenzentren zuruckzufuhren. Vorstellungen zum mechanisch induzierten Anregungsprozes werden dargestellt. Messungen der ortlich aufgelosten OSEE bestatigen die Notwendigkeit der Kenntnis der Ladungsstruktur bei der Interpretation des Emissionsreliefs.

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