Abstract
Results of investigations on etching of the (110) and (001) faces of ErFeO 3 single crystals are presented. New etchants (H 3PO 4; and H 3PO 4 in combination with HNO 3) produce good-quality pits. It is established that the etchant composed of three parts of H 3PO 4 and one part HNO 3 at 150 °C is the best dislocation etchant. The kinetics of etching, including studies on the variation of lateral extension and depth of pits with time at different temperatures of the etchant, and the effects of the etchant composition on the etching kinetics, are investigated. It is observed that the etching rate increases with increasing temperature and concentration of the etchant.
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