Growth and dislocation etching of InBi 1−xSe x ( x=0.15) single crystals

Abstract

Single crystals of InBi 0.85 Se .15 ( x=0.15) have been grown by the zone melting method. The freezing interface temperature gradient was 65 °C/cm and the best-quality single crystal has been obtained at growth velocity 1.5 cm/h. The crystals grown by the zone melting method have been observed to exhibit certain typical features on their top free surfaces. The energy dispersive analysis of X-ray (EDAX) technique has been used for testing the presence of constituent element of InBi:Se single crystal. A new dislocation etchant has been developed by the successive trial–error method. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. Various standard tests for a dislocation etchant have been carried out and results are reported.