Investigation on the reflectance properties on silicon nanowires grown by electroless etching

Abstract

In this study, silicon nanowires (SiNWs) were fabricated at four different lengths of time and three etching solution concentrations at room temperature using the electroless etching technique in a silver nitrate (AgNO3) and hydrofluoric acid (HF) based solution. The results show that the reflectance of SiNWs can be modulated as a function of the lengths of the nanowires, and that these lengths can be modulated as a function of the chemical etching ratios. Experiments have shown that a reflectance coefficient as low as 1.2% can be achieved at certain visible wavelengths for the prepared SiNW structures.