Abstract
Polyimide nanocomposite insulating materials are widely used in electrical and electron engineering owing to their outstanding electrical, mechanical, thermal, and wear-resistance properties. Polyimide/silica (PI/SiO2) nanocomposites have been prepared by the polymerization process of adding tetraethoxysilane (TEOS) and the coupling agent isocyanatopropyltriethoxysilane (ICTOS) in polyimide. The effects of SiO2addition on the microstructure and the dielectric property of nanocomposite films were investigated. It was found that the silica particles were well dispersed in PI matrix and the sizes of SiO2particles in the hybrid films range from 20 nm to 30 nm for 5-15 wt% SiO2loading in the matrix. The dielectric constant and the dielectric loss (tan δ) of these films increased with the increase of the content of silica particles.
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