Abstract
The purpose of this paper is to present analyses of the junction temperature of planar power 4H-SiC MOSFET under short-circuit events especially when failure appears. To characterize the junction temperature related to this failure type, various planar power SiC MOSFETs from several manufacturers were studied. The junction temperature during a short circuit was estimated using ANSYS Multiphysics software with dimensions and physical parameters of each device individually adjusted according to its experimental characteristics. Obtained results approximatively show the same junction temperature rating at instant of failure overall devices under test. This junction temperature threshold seems to be responsible for thermal runaway phenomenon triggering the failure process. Below this critical junction temperature, the device can safely turn-off the short circuit current or fail into a “soft failure” due to a short circuit between gate and source.
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