Abstract
In this letter, we investigated the effect of indium composition on carrier relaxation mechanisms in InGaN alloys. Four high quality alloys with indium composition from 25% to 75% were fabricated using energetic neutral atomic-beam lithography/epitaxy molecular beam epitaxy. Using sub-picosecond resolved photoluminescence at high carrier density, it was found the effective carrier lifetime extends with increasing indium composition. Moreover, the calculated initial carrier temperature also rises with higher indium composition. These results are consistent with the theoretical prediction that a greater phonon bandgap could reduce the carrier cooling rate to a certain extent via hot carrier bottleneck effect.
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