Abstract
The preparation process, micro-structure and electrical properties of Pb(Zr x Ti 1− x )O 3 (PZT) thin films were investigated in this paper. The Ag/PZT( x = 0.95)/YBCO/Si thin films were prepared by pulsed laser deposition (PLD). Si was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by PLD, and PZT was epitaxially deposited on YBCO also by PLD. After rapidly annealing, the AFM, XRD and the analysis of their electrical characters showed the films had good ferroelectric and pyroelectric properties. At 50 °C, the pyroelectric coefficient ( p) was 3.5 × 10 −8 C/(cm 2 K), the remanent polarization ( P r ) and the coercive field ( E c ) were 43.6 μC/cm 2 and 19.3 kV/cm respectively.
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