Abstract
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
Highlights
The ever increasing performance requirements in highfrequency electronics have pushed Silicon-based Field Effect Transistors (SiFETs) technology to scale down geometries to the limit [1], [2]
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance
We carried out an in-depth statistical study of Metal-oxide Graphene Field-effect Transistors (MOGFETs) aimed at experimentally evaluating
Summary
The ever increasing performance requirements in highfrequency electronics have pushed Silicon-based Field Effect Transistors (SiFETs) technology to scale down geometries to the limit [1], [2]. This aspect has produced serious drawbacks, known as short channel effects [3]. We carried out an in-depth statistical study of Metal-oxide Graphene Field-effect Transistors (MOGFETs) aimed at experimentally evaluating. A comparative study has been carried out showing the increase of high-frequency performance of MOGFETs employing our structure with respect to single-gate devices having the same channel length and width and the same oxide thickness. In order to fabricate the clamped gate ones, the dual-finger top-gate has been patterned on Al2O3 by e-beam lithography, followed by the evaporation of a Ti/Au bilayer (∼5/ 20 nm) and lift-off in acetone
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