Abstract

The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between E V−C deduced by the Cd 4d core level with valence band region and E B deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au–CdZnTe without passivation and 1.17±0.02 eV for Au–CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current–voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance–voltage method.

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