Abstract
With the rapid development of micro-electronics technology and the demand of consumers for minimized and functional electronic products, the two-dimensional (2D) technology based on Moore's law has been facing serious challenges. Three-dimensional (3D) packaging technology gradually becomes the focus of research and through silicon via (TSV) is one of the key technologies of 3D packaging. Currently, Cu is the main filling material for TSV, but Cu-TSV is prone to serious thermal reliability problems, such as creep, cracks and voids, which will eventually lead to failure. Filling TSV with solders has become one of the potential alternative technologies, but there are few experimental studies on its thermal reliability. In this paper, Sn58Bi-TSV was completed, and the filling effect was detected by SEM. In addition, thermal shock test and aging test were used to analyze the thermal reliability of Sn58Bi-TSV.
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