Abstract
The significance of variation on tilt angle ion implantation for fabricating the Vertical MOSFET with ORI (Oblique Rotating Implantation) technique is investigated. For this purpose, the angle of the ion implantation for forming the source and drain region is varied from 0° to 80°. Various effects on physical structure of the device and its corresponding electrical properties have been observed. The overall result promotes the optimal angle for the ion implantation of the Vertical Double Gate MOSFET (VDGM) structure is found to be remarkable at 45° with shorter channel length, L g = 45nm, lower sheet resistance R D = 14.7Ω, R S =28.9 Ω, high sub-threshold swing, SS= 62mV/dec and high saturation current, I DSAt = 1.04mA/μm.
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