Abstract
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET.
Highlights
A tunnel field-effect transistor (TFET) has attracted attention as a candidate for low-power applications because of its low subthreshold swing and low off-current compared with the metal-oxide-semiconductor field-effect transistor (MOSFET) [1,2,3,4,5]
Since a working principle of TFET relies on band-to-band tunneling (BTBT), TFET can achieve under 60 mV/decade subthreshold swing which acts as a limit on MOSFET [5,6,7]
TFET has a limitation in its on-current, which is lower than that of the conventional MOSFET because of low BTBT rates [8]
Summary
A tunnel field-effect transistor (TFET) has attracted attention as a candidate for low-power applications because of its low subthreshold swing and low off-current compared with the metal-oxide-semiconductor field-effect transistor (MOSFET) [1,2,3,4,5]. Since a working principle of TFET relies on band-to-band tunneling (BTBT), TFET can achieve under 60 mV/decade subthreshold swing which acts as a limit on MOSFET [5,6,7]. TFET has a limitation in its on-current, which is lower than that of the conventional MOSFET because of low BTBT rates [8]. An L-shaped TFET using vertical BTBT has been proposed [9].
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
