Abstract
ZnO:A1 is widely used as transparent conductive oxide (TCO) layer in Cu(In, Ga)Se2 and Cu(In, Ga)(S, Se)2-based solar cells. To widen the bandgap energy $(\mathbf{E}_{\mathbf{g}})$ of TCO layer and optimize the difference of conduction band minimum between TCO and the absorbers for the enhancement of solar cell performances, Znl-xMgxO:A1 was systematically investigated as the alternative TCO layer. The Znl-xMgxO:A1 films with different [Mg]/([Mg]+[Zn]) ratios were prepared by radio frequency (RF) magnetron co-sputtering from ZnO:AI and MgO targets. It is demonstrated that $\mathbf{E}_{\mathbf{g}}$ of Znl-xMgxO:A1 is increased with enhancing $[\mathbf{Mg}]/([\mathbf{Mg}]+[\mathbf{Zn}]$), while the basic crystal structure of Znl-xMgxO:A1 with $[\mathbf{Mg}/([\mathbf{Mg}] +[\mathbf{Zn}]$) in a range of 0-0.205 is ZnO. Moreover, Znl-xMgxO:A1 films with small $[\mathbf{Mg}]/([\mathbf{Mg}]+[\mathbf{Zn}]$) ratios of approximately 0.064-0.123 with low resistivity possesses the higher film quality and Hall mobility than those of ZnO:A1, while the carrier density is decreased with increasing $[\mathbf{Mg}]/([\mathbf{Mg}]+[\mathbf{Zn}]$), which could be beneficial to lower the free carrier absorption. Consequently, Znl-xMgxO:A1 films are promisingly utilized as the TCO layer.
Published Version
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