Abstract
InGaP is found to etch in HCl, Br 2MeOH or HNO 3. The etch rates in HCl and Br 2MeOH are faster for p-type InGaP relative to n-type material, and more rapid in In-rich samples compared to stoichiometric InGaP. Etching in 1% Br 2MeOH is diffusion-limited with an activation energy of ∼4.4 kcal mol −1. Only HCl-based solutions are found to provide selective etching of InGaP over GaAs.
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