Abstract
In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15–20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I–V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.
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