Abstract
n-ITO/p-InGaAsP solar cells have been fabricated. Lattice-matched LPE growth of InGaAsP layers on GaAs has been carried out before the ITO film is deposited by rf sputtering. The best cell without an antireflection coating exhibits a conversion efficiency of 9.6% under AMI illumination and the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.6 V, 24.5 mA/cm2, and 0.653, respectively.
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