Abstract
ABSTRACT In this paper, we report the high-frequency performance of ultra-scaled AlN/GaN/InGaN double heterojunction high electron mobility transistor (HEMT) on SiC. Industry standard Synopsys Sentaurus TCAD is used for device simulation. The proposed double heterojunction AlN/GaN/InGaN HEMT device with regrown n+ InGaN/GaN ohmic contacts exhibited a record fT/fmax of 451/448 GHz for 20 nm gate length. The double heterojunction HEMT with GaN cap layer uplift the breakdown voltage (21 V) of deeply scaled device structure. The presented high-frequency performance of AlN/GaN HEMT will be the most suitable candidate for next-generation high speed and high power microwave electronics.
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