Abstract
This study investigated on polarization-induced remote interfacial charge scattering, a scattering mechanism caused by the interfacial polarization charge, for Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors (HEMTs). Results show that remote interfacial charge scattering plays a critical role in the mobility of two-dimensional electron gas (2DEG) in thin barrier HEMTs. The electronic mobility limited by remote charge scattering is found to be a function of the fixed charge density induced by the Al2O3 layer, 2DEG density, and barrier thickness. Results of this study can be used in designing structures to generate higher electron mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs.
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