Abstract
Transient reverse currents flow in X-ray detector diodes when a high reverse bias (operating voltage) is suddenly applied from 0 V, which leads to problems in the X-ray measurements. Discharge current transient spectroscopy (DCTS) was applied to determine the densities, energy levels and capture cross sections of traps related to the transient reverse currents in the diodes. DCTS analysis revealed one type of trap with EC-0.54 eV in our silicon pin diodes, where EC is the energy level at the bottom of the conduction band.
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