Difference between Traps Determined from Transient Capacitance and Transient Reverse Current

Abstract

The densities and energy levels of traps in silicon pin diodes are determined using the transient capacitance method (ICTS: isothermal capacitance transient spectroscopy) as well as the transient reverse current method (DCTS: discharge current transient spectroscopy). The traps determined by ICTS are located in the i layer (i.e., the n- region) and affect the steady-state reverse current (i.e., a generation current). Conversely, the traps determined by DCTS are probably located at the surface of the substrate.