Abstract
In order to characterize traps in semi-insulating 4H-SiC that is regarded as an attractive semiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a diode. We have found at least three types of traps whose emission rates at 373 K are 4.9×10-3, 8.3×10-3 and 8.0×10-2 s-1. Since it is difficult to characterize traps in semi-insulating semiconductors by transient capacitance methods, it is demonstrated that DCTS is a powerful method for determining the densities and emission rates of traps in semi-insulating semiconductors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
